PART |
Description |
Maker |
Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
TM005-020-14-14 |
0.5 - 2 GHz 14 dBm Module
|
Transcom, Inc.
|
TM020-040-18-24 |
2 - 4 GHz 24 dBm Module
|
Transcom, Inc.
|
TM020-080-08-27 |
2 ~ 8 GHz 27 dBm Module
|
Transcom, Inc.
|
TM053-059-09-39 |
5.3 - 5.9 GHz 39 dBm Power Module
|
Transcom, Inc.
|
TM120-155-06-32 |
12 - 15.5 GHz 32 dBm Power Module
|
Transcom, Inc.
|
TM120-155-07-29 |
12 - 15.5 GHz 29 dBm Power Module
|
Transcom, Inc.
|
CMM3566-LC-000T PB-CMM3566-LC |
3.45 to 3.5 GHz 7.0 V, 24 dBm W-cdma Power Amplifier 3.45.5 GHz 7.0伏,24 dBm的的W - CDMA功率放大 3.45 to 3.5 GHz 7.0 V, 24 dBm W-cdma Power Amplifier 3450 MHz - 3500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Mimix Broadband, Inc. MIMIX BROADBAND INC
|
TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
HMC7885 HMC7885FH18 |
2 GHz to 6 GHz, 45 dBm Power Amplifier
|
Analog Devices
|